CMC910A HIEE401807R0001 Flash Memory Subboard ABB

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Essential details：CMC910A HIEE401807R0001 Flash Memory Subboard ABB

Products Description

• Product ID:HIEE401807R0001

• ABB Type Designation:CM C910 A: AMC3x

• Catalog Description:CM C910 A: AMC3x; Flash Memory Subboard

• Long Description:CM C910 A: AMC3x

CMC910A HIEE401807R0001

Increased junction temperature
A possible way to increase the output power of an existing converter design is to increase the temperature rating of the used power semiconductors. For continuous operation the cooling system may set a limit for the additional losses that result from the increased temperature. For intermittent operation though, the temperature increase is a valid option. This since the increase in average power, and through that the requirements on the cooling system, is limited. Important is that the semiconductor can handle a high load for a limited amount of time and by this avoids to step up in converter size.
To achieve such a high load capability, a number of improvements to the HPT-IGCT are being implemented with a targeted operating temperature increase from 125 °C to 140 °C. In the silicon the corrugated p-base doping profiles introduced in the HPT-IGCT have been optimized to allow for full SOA exploitation over the whole temperature range from 0 °C to 140 °C. Further, also internal interfaces like the metallization on the wafer have been improved to achieve a higher thermo-mechanical wear resistance. These measures allow for the higher temperature excursions of the device under intermittent operation at 140 °C. The verification of these improvements has started and the first results look very promising.
The reverse blocking IGCT
Certain AC applications and current source inverters (CSIs) require a switching device that is symmetrically blocking. Although this could be realized by using an asymmetric IGCT connected in series with a fast diode, the preferred solution is a symmetric IGCT. Since the performance requirements and some modes of operation of symmetric IGCTs considerably differ from asymmetric IGCTs, there is quite much learning needed for their realization. ABB has taken the challenge and realized the first symmetric IGCTs that are undergoing extensive testing. A new product lineup is planned with a voltage rating of 6,500 V, ideally suited for a 2,300 V line voltage as per table 2.

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