3BHL000386P0101 5SHX0660F0001 Press-Pack IGBT Module

Parameter Name	Parameter Value
Product Model	3BHL000386P0101 / 5SHX0660F0001
Manufacturer	ABB
Product Type	Press-Pack IGBT Module
Voltage Rating	3300 V
Current Rating	660 A (IC nom) @ 80°C
Max Switching Frequency	500 Hz
Collector-Emitter Saturation Voltage	2.25 V @ 660 A
Turn-On Energy (Eon)	2000 mJ
Turn-Off Energy (Eoff)	2400 mJ
Thermal Resistance (Junction-to-Case)	0.035 K/W
Isolation Voltage	6000 V AC (min)
Weight	950 g
Terminal Type	Press-fit contacts
Operating Temperature	–40°C to +125°C (Tj max)
Cooling Method	Liquid or forced air
Certifications	UL 508, IEC 60747

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Description

Product Overview

The ABB 3BHL000386P0101 5SHX0660F0001 is a high-power IGBT (Insulated Gate Bipolar Transistor) semiconductor module from ABB’s HiPak series, engineered for medium-voltage variable frequency drives (VFDs) and industrial power conversion systems. This press-pack IGBT module delivers robust switching performance for demanding applications like traction drives, industrial compressors, and renewable energy inverters. The ABB 3BHL000386P0101 5SHX0660F0001 integrates low-loss silicon technology with a low-inductance design to achieve high efficiency (≥99%) at switching frequencies up to 500 Hz. Its pressurized contact structure ensures uniform current distribution and thermal management, critical for parallel operation in multi-MW systems. With integrated NTC temperature sensors and arc-proof construction, this module enables reliable operation in harsh environments while minimizing cooling requirements.

Technical Specifications

Parameter Name	Parameter Value
Product Model	3BHL000386P0101 / 5SHX0660F0001
Manufacturer	ABB
Product Type	Press-Pack IGBT Module
Voltage Rating	3300 V
Current Rating	660 A (IC nom) @ 80°C
Max Switching Frequency	500 Hz
Collector-Emitter Saturation Voltage	2.25 V @ 660 A
Turn-On Energy (Eon)	2000 mJ
Turn-Off Energy (Eoff)	2400 mJ
Thermal Resistance (Junction-to-Case)	0.035 K/W
Isolation Voltage	6000 V AC (min)
Weight	950 g
Terminal Type	Press-fit contacts
Operating Temperature	–40°C to +125°C (Tj max)
Cooling Method	Liquid or forced air
Certifications	UL 508, IEC 60747

Major Features and Advantages

High Power Density

Low-loss SPT+ (Soft Punch Through) IGBT technology reduces switching losses by 20% vs. standard modules.
Integrated anti-parallel diodes eliminate external diode stacks.

Robust Mechanical Design

Press-pack structure withstands 100 kN clamping force for vibration-resistant operation in traction/mobile equipment.
Arc-proof enclosure contains internal faults without external explosion (IEC 60079 certification).

5SHX06F6004

Thermal Management

Symmetrical thermal path enables double-sided cooling for 30% higher power cycling capability.
Integrated NTC thermistor provides real-time junction temperature monitoring (±3°C accuracy).

Parallel Operation Ready

Tight parameter distribution (ΔVCEsat <0.3 V) allows parallel connection without derating.
Low inductance (<15 nH) minimizes voltage overshoot during switching.

Diagnostics & Protection

Short-circuit withstand capability: 10 μs @ 3300 V DC link.
VCE desaturation detection compatible with ABB’s HVDC gate drivers.

Application Domains

The ABB 3BHL000386P0101 5SHX0660F0001 excels in:

Industrial Drives: Medium-voltage VFDs for pumps/compressors (ABB ACS 2000 series).
Rail Traction: Main inverters for locomotives and metro trains (3–4 MW systems).
Renewable Energy: Grid-tie inverters for solar/wind farms (1500 V DC systems).
Mining: Conveyor drive systems with regenerative braking.
Marine Propulsion: Azipod® electric drive power conversion.